发明名称 |
Plated nickel-gold/dielectric interface for passivated MMICs |
摘要 |
A thin film (at least one atomic layer to about 400 ANGSTROM ) of nickel is electrolytically plated on top of electrolytically-plated gold electrodes in GaAs monolithic microwave integrated circuits (MMICs) without any additional photoresist masking step. The thin electrolytically-plated nickel film improves adhesion of a passivating dielectric layer (e.g., silicon dioxide, silicon nitride, and silicon oxynitride) formed on the electrolytically-plated gold electrodes. The electrolytically-plated nickel film can be removed locally to facilitate the fabrication of plated silver bumps (for off-chip electrical connections and thermal paths) on passivated flip chip MMICs.
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申请公布号 |
US5861341(A) |
申请公布日期 |
1999.01.19 |
申请号 |
US19960680453 |
申请日期 |
1996.07.15 |
申请人 |
RAYTHEON COMPANY |
发明人 |
WEN, CHENG P.;WONG, WAH S.;ARTHUR, ARLENE E. |
分类号 |
H01L23/66;(IPC1-7):H01L21/441 |
主分类号 |
H01L23/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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