发明名称 THE MANUFACTURE OF PHASE SHIFT MASK
摘要 A method for fabricating a half-tone mask having a main chip region and a guard-board region, in which a deposition on entire surface by electrolytic process is made possible to simplify the fabricating process, including the steps of providing a transparent substrate, forming a half-tone mask on the transparent substrate, and selectively forming light shielding layers in the guard-board region of the half-tone mask.
申请公布号 KR0161856(B1) 申请公布日期 1999.01.15
申请号 KR19950031654 申请日期 1995.09.25
申请人 LG SEMICONDUCTOR CO., LTD. 发明人 KIM, HONG-SUK
分类号 G03F1/29;G03F1/32;G03F1/68;H01L21/027 主分类号 G03F1/29
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