METHOD AND APPARATUS FOR LIQUID PHASE EPITAXIAL GROWTH

摘要

An improved method and apparatus for liquid phase epitaxial growth are provided, wherein a plurality of substrates (W) are placed in a deposition chamber (22) having at least one first vent hole (22b); a solution (S) for liquid phase growth is held in a solution chamber (23) having at least one second vent hole (23b) and at least two sub-chambers (23A, 23B) separated by a partition plate (25) and communicating with each other via a communicating portion (23C); and before the substrates (W) and the solution (S) for liquid phase growth are brought into contact with each other, the deposition chamber (22) and the solution chamber (23) are revolved, causing the solution (S) for liquid phase growth to move through the communicating portion (23C) so as to increase and decrease the volume of space in the respective sub-chambers (23A, 23B), thereby causing replacement of a heat-treatment gas in the deposition chamber (22) and the solution chamber (23), while achieving heat treatment. With this heat-treatment, surface oxide films on the substrates (W) and the solution (S) are removed, thus making it possible to obtain a liquid phase epitaxial layer with excellent qualities. $$