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发明名称
A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR LAYER OF SiC
摘要
申请公布号
EP0890184(A2)
申请公布日期
1999.01.13
申请号
EP19970915823
申请日期
1997.03.26
申请人
ABB RESEARCH LTD.
发明人
ROTTNER, KURT
分类号
H01L21/265;H01L21/00;H01L21/337;H01L29/808;H01L29/861;(IPC1-7):H01L21/00
主分类号
H01L21/265
代理机构
代理人
主权项
地址
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