| 摘要 |
A semiconductor device has a connection electrode (4) and protective film (7) formed of organic material and covering the connection electrode (4). An opening (8) is formed in the protective film (7) to expose the connection electrode (4). A natural oxide layer is etched by argon-based dry etching. The surface layer of the protective film (7) is altered to reduce the insulativity in the dry etching process. After a projection electrode (14) is formed on the connection electrode (4) later, the altered surface layer of the protective film (7) is removed by oxygen-based dry etching. As no altered surface layer remain on the protective film (7), an adverse affect such as inadequate insulation does not occur. <IMAGE> |
