Multi-layer wiring structure having narrowed portions at predetermined length intervals

摘要

A semiconductor device having a laminated wiring layer composed of an Al or Al alloy layer and a high melting point conductive layer, wherein the laminated wiring layer has narrowed portions at which the stress tolerance of the Al or Al alloy is reduced. The controlled breakage of the Al or Al alloy layer at the narrowed portion results in a laminated wiring layer of a predetermined resistance component.