| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent stress from acting on an element in a wire-bonding operation and the element from breaking down owing to the bonding operation by a structure, wherein an active area which constitutes a switching control operation is not formed in the lower part of a wire-bonding area. SOLUTION: An aluminum wiring layer 29, a polysilicon layer 30, an oxide film layer 31, a P-layer 32, an N<-> -layer 33, an N<+> -layer 39 and a P<+> -layer 34 are formed under an emitter-bonding area 28 sequentially from the upper part, and the P-layer 32 is connected to an emitter electrode. An aluminum layer 36, a polysilicon wiring layer 37 and an oxide film layer 38 are formed under a gate-bonding area 35 sequentially from the upper part. In this manner, since an active area which constitutes a transistor or a channel acting as an insulated- gate bipolar transistor is not formed under the bonding areas 28, 35, an element is not damaged owing to a stress in a wire bonding operation.</p> |
