| 摘要 |
PROBLEM TO BE SOLVED: To form a compensation diffusion layer at a low temperature at which a metal silicide does not agglomerate, to prevent the silicide from agglomerating when an impurity diffusion layer is formed and to restrain a rise in a resistance value by a method, wherein ions are implanted under a background pressure at a specific value or lower. SOLUTION: Phosphorus ions as n-type impurities are implanted into a contact hole in a p-well region, by using an ion implantation apparatus in which a background pressure is at 1.3×10<-7> Pa or lower. Similarly, boron ions as p-type impurities are implanted into a contact hole in an n-well region by using an ion implantation apparatus, in which a background pressure is at 1.3×10<-7> Pa or lower. The ions are heat-treated at 600 deg.C or lower in a nitrogen atmosphere, and compensation diffusion layers 8', 9' are formed. In this manner, since the background pressure is set at 1.3×10<-7> Pa or lower when the ions are implanted, the impurities can be sufficiently activated, even without executing annealing operation at a high temperature.
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