发明名称 AC limiting circuit based on silicon-carbide FETs
摘要 A limiter circuit for flow of. A. C currents including two series-opposition connected, field effect transistors (FETs) (1,2) whose source electrodes (S) are connected via a resistance (3) for setting/adjusting the threshold level and in which the gate connection (G) of one transistor (2,1) is connected to the source connection (S) of the other transistor (1,2). The two field-effect transistor (1,2), specifically a silicon- carbide type. FET, have dissimilar forward- and reverse-bias characteristics. A variable resistance (4) is specifically connected in series with the limiter circuit and it's value is variable in an opposite sense to that of the common, variably formed source resistance (3), for setting/adjusting the threshold level.
申请公布号 DE19725870(A1) 申请公布日期 1999.01.07
申请号 DE19971025870 申请日期 1997.06.18
申请人 SIEMENS AG, 80333 MUENCHEN, DE 发明人 KOELPIN, THOMAS, DR., 92224 AMBERG, DE
分类号 H02H9/02;(IPC1-7):H02H9/02 主分类号 H02H9/02
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