INTERCONNECT SPACER STRUCTURES

摘要

A semiconductor process in which a spacer structure (140) is fabricated on sidewalls (114) of an interconnect (116A) to protect sidewalls of the interconnect sidewalls from subsequent processing. An interconnect layer (102) is formed on an upper surface of a semiconductor substrate (100). The interconnect layer (102) includes an interconnect structure (116A) and the interconnect structure includes an interconnect sidewall (114). A spacer structure (140) is then formed on the sidewall (114) of the interconnect layer (116A) and an interlevel dielectric (150) is then deposited on the interconnect layer (116A). A contact tunnel (160) is thereafter formed into the interlevel dielectric (150). A center of the contact tunnel (160) is preferably aligned over the interconnect structure (116A). A perimeter of the contact tunnel (160) may overlap the underlying interconnect structure (116A). In other words, the perimeter of the contact tunnel may extend beyond a plane defined by the interconnect sidewall (114). Thereafter, the contact tunnel is plugged with a conductive material (184).