| 摘要 |
PURPOSE: To obtain a cutting method in which a compound semiconductor ingot can be cut by a wire saw by a method wherein a direction in which a wire is moved back and forth is set to a direction which is separated at an angle in a specific range from the cleavage direction of an ingot single crystal. CONSTITUTION: Three multigroove rollers 1, 2, 3 are arranged in a triangle- shape. Many grooves 11, 12, 13 are cut respectively, and wires are wound so as to pass the grooves 11, 12, 13. Then, an ingot tape 5 which can be raised and lowered is arranged in a part corresponding to the base of the multigroove rollers 1, 2, 3 which have been arranged in a triangle-shape, a jig 6 is fixed onto it, and an ingot 7 is bonded to the jig 6. A direction in which the wires are moved back and forth is set in a direction which is separated by 22.5 to 67.5 deg. from the cleavage direction of the single crystal of the ingot 7, and wafers which have a plane direction of within 100}±15 deg. are cut from the ingot 7. Thereby, the wafers can be cut in parallel at a stroke, and their cutting time can be shortened. |
