| 摘要 |
PROBLEM TO BE SOLVED: To obtain high performance such as low wiring resistance, etc., and also high reliability, by a method wherein there is provided a wiring layer forming a titanium nitride film containing a specified weight in a lower portion of an aluminum alloy layer. SOLUTION: After titanium nitride film 13 which is rich in titanium is formed on a semiconductor substrate 1, an aluminum alloy layer 14 is formed, and then a titanium nitride film 15 which is rich in titanium is formed. Thereafter, an unnecessary area of the titanium nitride film rich in titanium 15/the aluminum alloy layer 14/the titanium nitride film rich in titanium 13 is removed, and patterns of a wiring layer 16 of a three layer structure comprising the titanium nitride film rich in titanium 15/the aluminum alloy layer 14/the titanium nitride film rich in titanium 13 are formed. Note, the titanium films rich is titanium 13, 15 are titanium nitride films containing 70 to 95% of titanium. |
