发明名称 Integrated DRAM with high speed interleaving
摘要 An integrated circuit includes a controller and a memory to implement a graphics controller. The controller and memory are controlled by a common clock signal to operate synchronously with each other. The memory is organized in a plurality of storage arrays, organized in two banks. A set of bit-line sense amplifiers is provided for each bank. A pair of row decoders decode a row address to select a row of data from each bank. The selected row of data is received by a pair of bit-line sense amplifiers. A column decoder selects a column of data from the pair of bit-line sense amplifiers. A pair of multiplexers select one-half of the selected column in response to a HI/LO signal and then select the remaining half of the selected data in response to a change in value of the HI/LO signal. Main or data sense amplifiers amplify the output of the multiplexers to provide data outputs in the form of full swing signals.
申请公布号 US5856947(A) 申请公布日期 1999.01.05
申请号 US19970920604 申请日期 1997.08.27
申请人 S3 INCORPORATED 发明人 FANG, HONG-GEE
分类号 G11C11/401;G06F12/06;G11C7/10;(IPC1-7):G11C16/04 主分类号 G11C11/401
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