发明名称 |
Second implanted matrix for agglomeration control and thermal stability |
摘要 |
A semiconductor device on a semiconductor wafer, wherein improvements are realized to agglomeration control, resistivity, and thermal stability of a titanium disilicide layer on a polysilicon layer. Agglomeration control is achieved through the use of two carefully selected low dose barrier diffusion matrix implants into the polysilicon layer, one of which is situated at an interface between the layer of polysilicon and the resultant layer of titanium disilicide film after heat treatment, and the other of which is near the surface of the resultant layer of titanium disilicide film after heat treatment.
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申请公布号 |
US5856698(A) |
申请公布日期 |
1999.01.05 |
申请号 |
US19970959238 |
申请日期 |
1997.10.28 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
HU, YONG-JUN;PAN, PAI-HUNG;KLARE, MARK |
分类号 |
H01L21/28;H01L21/285;H01L21/336;H01L29/49;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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