发明名称 |
Positive photoresist compositions and multilayer resist materials using the same |
摘要 |
A positive photoresist composition comprising (A) an alkali-soluble resin; (B) a quinonediazido group containing compound; and (C) at least one sulfonyl halide represented by the following general formula (I):R1-SO2-X(I)where R1 is an alkyl group, a substituted alkyl group, an alkenyl group, an aryl group or a substituted aryl group; X is a halogen atom, as well as a multilayer resist material using this composition. Very fine (<0.4 mu m) resist patterns can be formed that have high feature or edge integrity, that provide good contrast between exposed and unexposed areas after development and that assure a wider margin of exposure, better depth-of-focus characteristics and sharper cross-sectional profiles.
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申请公布号 |
US5853948(A) |
申请公布日期 |
1998.12.29 |
申请号 |
US19970960621 |
申请日期 |
1997.10.29 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
SAWANO, ATSUSHI;MIZUTA, JUNICHI;DOI, KOUSUKE;KOHARA, HIDEKATSU;NAKAYAMA, TOSHIMASA |
分类号 |
G03F7/004;G03F7/022;G03F7/023;G03F7/11;H01L21/027;(IPC1-7):G03F7/023 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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