发明名称 |
Active pixel sensor cell that reduces the effect of 1/f noise, increases the voltage range of the cell, and reduces the size of the cell |
摘要 |
The accuracy of an active pixel sensor cell is increased by utilizing a reset diode in lieu of the reset transistor that is conventionally used to reset the voltage on the photodiode of the cell. The reset diode, which is largely unaffected by 1/f noise, consistently resets the photodiode to a substantially constant voltage as opposed to the reset transistor which varies the reset voltage on the photodiode across integration periods due to the effect of 1/f noise. In the present invention, the photodiode is formed by forming a well region of a second conductivity type in a substrate of a first conductivity type. The reset diode is then formed by forming a reset region of the first conductivity type in the well region.
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申请公布号 |
US5854498(A) |
申请公布日期 |
1998.12.29 |
申请号 |
US19980028125 |
申请日期 |
1998.02.23 |
申请人 |
FOVEONICS, INC. |
发明人 |
MERRILL, RICHARD BILLINGS |
分类号 |
H01L27/146;(IPC1-7):H01L31/062;H01L31/113 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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