发明名称 LED with high brightness
摘要 Novel LED has (a) a substrate (52) which is formed on a first electrode (50) and which supports an active layer (54) sandwiched between a lower first conductivity type sheath layer and an upper second conductivity type sheath layer; (b) an overlying second conductivity type window layer (56) of resistivity less than that of the upper sheath layer; (c) a second conductivity type contact layer (58, 59) which is applied on the window layer (56) to form an ohmic contact and which has a through-opening for exposing the window layer (56); (d) a transparent conductive oxide layer (60) which covers the contact layer and fills its opening and which has a resistivity less than those of the window layer and the contact layer; and (e) a second electrode (62) formed on a portion of the transparent conductive oxide layer (60) and aligned with the opening in the contact layer (58, 59).
申请公布号 DE19817368(A1) 申请公布日期 1998.12.24
申请号 DE19981017368 申请日期 1998.04.18
申请人 EPISTAR CORP., HSINCHU, TEI PAI, TW 发明人 LEE, BIING-JYE, HSINCHU, TW;JOU, MING-JIUNN, HSINCHU, TW;TAN, JACOB C., HSINCHU, TW
分类号 H01L33/02;H01L33/14;H01L33/30;(IPC1-7):H01L33/00 主分类号 H01L33/02
代理机构 代理人
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