| 摘要 |
PROBLEM TO BE SOLVED: To increase the yield by avoiding the release from an n side pad electrode. SOLUTION: Within an n type semiconductor block 11, p type semiconductor layers 13 are formed in a pluralities and then the first interlayer insulating films 12 having an n side aperture part 67 is formed on the p type semiconductor layers 13. Besides, p side electrodes 14 connecting to the p type semiconductor layers 13 and n type electrodes 65 are formed on the first interlayer insulating film 12. Furthermore, p side matrix wirings 4 connecting to the specific p side electrodes 14 are formed through the intermediary of the second interlayer insulating film 18. The whole n side electrode 65 formed inside the n side aperture part 67 is to be the n type contact electrode for connecting to the n type semiconductor block 11 and also an n side pad electrode for connecting to outer circuit. In such a constitution, the n type pad electrode is formed on the surface of the n type semiconductor block 11 having excellent bond properties not on the surface of the interlayer insulating film having inferior bond properties, thereby enabling the peel off from the n side pad electrode to be avoided. |
