| 摘要 |
PROBLEM TO BE SOLVED: To reduce the resistance of a transmission path while realizing miniaturization by connecting an external connection terminal, having a lower resistance corresponding to the operating speed of a semiconductor chip, to a connecting part provided side by side with one side of the semiconductor chip. SOLUTION: An external connection terminal 16A is formed of a lower electric resistivity copper alloy and the surface thereof is subjected to gold plating or palladium plating, etc. This external connection terminal 16A is electrically connected to a semiconductor chip 12 by connecting one end of the terminal 16A to a connecting part 18 provided side by side with one side of a circuit formed surface. A semiconductor chip 12 is mounted on a mounting substrate 30 vertically thereto by soldering the external connection terminal 16A with solder 32. Thus, the electric conductivity of the external connection terminal 16A can be made very small and at the same time the transmission path can be made shorter, so that the electric resistance (impedance) of the transmission path as a whole can correspond to the operating speed of the semiconductor chip 12 functioning as a high speed corresponding memory. |
