发明名称 WAFER PASTING SHEET AND MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To form a wafer pasting sheet where a wafer subjected to wafer processing is pasted and divided into chips by dicing and which is kept free from package cracking and high in reliability, by a method wherein a radiation- curing adhesive agent layer and a polyimide adhesive agent layer are successively formed on a base film for the formation of the wafer pasting sheet. SOLUTION: A radiation-curing adhesive agent layer 2 is formed on a base film 1, and a polyimide adhesive agent layer 2 is formed on the layer 2 for the formation of a wafer pasting sheet 10. It is preferable that a releasing film is formed on the upside of the sheet 10 to protect the radiation-curing adhesive layer 2 and the polyimide adhesive agent layer 4 before the wafer pasting sheet 10 is used. It is preferable that the elastic modulus of the radiation-curing adhesive layer 2 is set at 1×10<9> dyn/cm<2> or above after the adhesive layer 2 is irradiated with radiation, and it is also preferable that the radiation-curing adhesive layer 2 is large enough in area to be supported on a ring frame for dicing a wafer, and possessed of an outer diameter smaller than the inner diameter of the ring frame.</p>
申请公布号 JPH10335271(A) 申请公布日期 1998.12.18
申请号 JP19970144240 申请日期 1997.06.02
申请人 TEXAS INSTR JAPAN LTD;LINTEC CORP 发明人 UMEHARA NORIHITO;AMAMI MASAZUMI;YAMAZAKI OSAMU;EBE KAZUYOSHI
分类号 C09J7/02;C09J5/00;H01L21/301;H01L21/58;H01L21/68;H01L21/683;(IPC1-7):H01L21/301 主分类号 C09J7/02
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