FORMING METHOD OF RESIST PATTERN

摘要

PROBLEM TO BE SOLVED: To improve the heat resistance and dry etching resistance of a resist film by subjecting the resist film after formation of a resist pattern to re- exposure by using a light source having a single wavelength peak at which the resist film shows absorption. SOLUTION: An interlayer insulating film 102 such as a silicon oxide film is formed by chemical vapor phase growing method on a silicon substrate 101, on which a chemically amplifying resist film 103 is applied by spin coating. The chemically amplifying resist film 103 is exposed through a mask of a desired pattern and developed to form a pattern in the chemically amplifying resist film 103. Then the whole surface of the film is exposed at 100 deg.C substrate temp. to the fight 105 from a light source having a single wavelength peak at which the chemically amplifying resist film 103 shows absorption. After re-exposure, it is more preferable to heat the substrate at high temp. as about 110 to 200 deg.C. Then the resist region 106 patterned is used as a mask to carry out anisotropic etching of the lower silicon oxide film to form a contact hole 107.