| 摘要 |
PROBLEM TO BE SOLVED: To reduce a pulse delay phenomenon by a method wherein an electronic trap amount in a GaAs oxide film on a GaAs active layer coming into contact with a depletion layer spreading from a gate electrode is reduced, and pulse characteristics of an output signal for a pulse signal are set more than characteristics. SOLUTION: GaAs active layers 7 are laminated on a GaAs semi-insulation substrate 8, and a source/drain electrode 4 is provided on the GaAs active layer 7, and a gate electrode 1 is arranged on the GaAs active layer 7 between the source and drain electrodes 4. When movements of electrons between the source and drain electrodes 4 are controlled according to a pulse signal input into the gate electrode 1, an electronic trap amount in a GaAs oxide film on the GaAs active layer 7 coming into contact with a depletion layer 9 spreading from the gate electrode 1 is reduced, and pulse characteristics of an output signal for a pulse signal are set more than 80%. Thereby, a delay of the pulse characteristics is prevented. |
