| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device and a manufacturing method thereof, wherein a hetero structure can be formed without deteriorating the crystal quality of gallium indium nitride containing prescribed indium composition. SOLUTION: When semiconductor layers which contain an indium gallium nitride layer are laminated on a substrate, the semiconductor layers located above the indium gallium nitride layer are prescribed in material. By this setup, the indium gallium nitride layer can be protected against thermal deterioration and interface deterioration, so that a gallium nitride semiconductor light emitting device of high quality can be grown. |
