| 摘要 |
PROBLEM TO BE SOLVED: To facilitate processing electrodes for ferroelectric capacitances and improve the yield by forming the electrodes, using the electroless or electrolytic plating for depositing a precious metal on a base layer having a catalytic action on this metal. SOLUTION: The manufacturing method comprises forming an Si oxide film 2 on an Si substrate 1, sputtering to form a Pd base film 3, coating a resist, exposing, developing, reactive ion etching to strip the resist, electroless plating to form lower electrodes 4 using Au as a precious metal, baking in an O-atmosphere at 650 deg.C for 10 min to form a ferroelectric thin film 5, processing it by the lithography to form a base layer 6 and upper electrodes 7 by the same technique as forming the lower electrodes, and heat treating in an O-atmosphere to obtain good polar characteristics. This avoids the difficulty of the etching process as a dry process, thereby providing very easily processed electrodes for ferroelectric capacitance elements. |
