| 摘要 |
PROBLEM TO BE SOLVED: To prevent degradation in such electric characteristics as insulation of a capacity element and short circuit between upper and lower electrodes of the capacity element due to etching at a capacity element of a ferro-electrics, relating to a semiconductor device using a ferro-electrics capacity element. SOLUTION: At a capacity element, a ferro-electrics film 8 is made to be of such structure as not etched. In order for forming such structure as this, the ferro-electrics film 8 is formed after a lower part electrode 7 is worked. By providing a diffusion protective film between the lower part electrode 7 and a base material oxide film, the element constituting the ferro-electrics is prevented from diffusing to the base material oxide film. Further, the lower part electrode is allowed to be tapered, so that an even ferro-electrics film is formed easily after the lower part electrode is worked. |
