Semiconductor image sensor production

摘要

Producing a semiconductor image sensor involves (a) forming a first conductivity type well (22) in an opposite second conductivity type semiconductor substrate (21); (b) forming, in the well, photoelectric converter regions (25, 26) and charge-coupled devices (CCDs) (24) for transfer, in one direction, of image charges created in the converter regions; (c) successively forming a gate insulation film (27), a polysilicon film (28), a cover insulating film (29), a first opaque screening metal (OSM) film (30) and a first insulating film (31) on the entire substrate surface, including the converter regions (25, 26) and the CCDs (24); (d) selectively patterning the first insulating film (31), the first OSM film (30), the cover insulating film (29) and the polysilicon film (28) to form poly-gates (28a) above the CCDs (24); (e) forming sidewall spacers (32a) on both sides of the cover insulating film (29) and the poly-gates (28a); (f) forming a second OSM film (33) on both s ides of the first OSM film (30) and the sidewall spacers (32a); and (g) removing the first insulating film (31).