| 摘要 |
PROBLEM TO BE SOLVED: To provide a copper target for sputtering capable of forming wiring coating having low electric resistance indispensable to a high speed arithmetic element and furthermore excellent in the uniformity of coating thickness and to provide copper thin coating. SOLUTION: This high purity copper sputtering target is the one in which the contents of Na and K are respectively regulated to <=0.1 ppm, the contents of Fe, Ni, Cr, Al, Ca and Mg are respectively regulated to <=1 ppm, the contents of carbon and oxygen are respectively regulated to <=5 ppm, the contents of U and Th are respectively regulated to <=1 ppb, and the content of copper other than gaseous components is regulated to >=99.999%. Furthermore, it is preferable that the average particle size in the sputtering face is regulated to <=250μm, the dispersion of the average particle size in every place is regulated to±20%, the X-ray diffraction intensity ratio I(111)/I(200) is regulated to >=2.4 in the sputtering face, and the dispersion thereof is regulated to±20%.
|
