Method for formation of capacitors

摘要

A method of forming a capacitor for a DRAM includes the steps of: forming an insulating layer with a contact hole on a substrate; forming a first conductive layer on the insulating layer and in the contact hole; forming a temporary layer pattern on a portion of the first conductive layer corresponding to the contact hole; forming a second conductive layer on the first conductive layer and on the temporary layer pattern; selectively implanting oxygen ions into the first and second conductive layers except a portion of the second conductive layer corresponding to a side face of the temporary layer pattern; heat treating so as to convert the oxygen-ion-implanted first and second conductive layer portions into an oxide; removing the oxide and temporary layer pattern; forming a dielectric layer on the surface of the first and second conductive layers; and forming a third conductive layer on the dielectric layer.