发明名称 FLOATING GATE TRANSISTORS
摘要 <p>A method of shifting the effective thresholds of a UV-activated floating gate P-MOS transistor and a UV-activated floating gate N-MOS transistor connected in series between the power supply rails of a circuit, the method comprising the steps of: applying a voltage equal to half the sum of the desired negative and positive power supply voltages to all inputs of the transistor arrangement; applying a negative offset voltage to the positive power supply rail and a positive voltage to the negative power supply rail; applying UV light to the transistors until the floating gate voltages of each transistor reach the respective applied offset voltages; and applying the desired power supply voltages to the appropriate power supply rails.</p>
申请公布号 WO1998056007(A1) 申请公布日期 1998.12.10
申请号 GB1998001606 申请日期 1998.06.02
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