| 摘要 |
<p>This method according to the invention allows the fabrication of bulk GaN crystals of high specific resistivity. This is achieved by the crystallization of GaN from the solution of atomic nitrogen in molten mixture of metals, containing gallium and Periodic Table group II metals: magnesium, calcium, zinc, beryllium, cadmium, under high pressure of nitrogen, in the temperature gradient. These crystals can be used to fabrication of excellent single crystalline GaN substrates for deposition of the homoepitaxial layers and structures for the optoelectronic applications.</p> |
