发明名称 METHOD AND DEVICE FOR PROCESSING SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a device, which prevents the line width of patterns on a resist film formed on the surface of substrate, after developing processing from being varied among plural substrates, even when the thickness of resist film formed on the surface of substrate is fluctuated in the heating and developing processing of substrate forming the resist film on its surface immediately after exposure processing. SOLUTION: A film thickness measuring part TM is provided for measuring the thickness of a resist film, formed on the surface of a substrate by a coating processing part SC and corresponding to the measured film thickness, the time of temperature of heating processing at a bake part PEB for the heating processing of substrate after exposure processing at an exposure processing part ST is controlled, so as to provide the prescribed developing processing results at developing processing parts SD1 and SD3, despite of the fluctuation in the thickness of resist film among plural substrates.
申请公布号 JPH10321516(A) 申请公布日期 1998.12.04
申请号 JP19970143507 申请日期 1997.05.15
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 TSUJI MASAO;OTANI MASAMI;IMANISHI YASUO;IWAMI MASAKI;NISHIMURA JOICHI;MORITA AKIHIKO;KAWAMOTO TAKANORI
分类号 G03F7/039;G03F7/20;G03F7/26;H01L21/027;H01L21/677;(IPC1-7):H01L21/027;H01L21/68 主分类号 G03F7/039
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