| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a memory cell having an embedded bit line whose position is self-aligned. SOLUTION: A trench 12 and a transistor element are formed on a semiconductor substrate 10, and a first insulating film is deposited thereon to fill the trench 12 therewith to form an insulating plug 21. After forming a second insulating film 31 on the semiconductor substrate 10, an opening is provided therein to expose one corner of each of the semiconductor substrate 10 and the insulating plug 21. Subsequently, each of the corners is etched to form a recessed groove 34, and a doped polysilicon film 41 is deposited thereon, followed by further deposition of a conductive film 42 thereon to fill the recessed groove 34. Then, a conductive plug 51 is formed through a pit-etching process, followed by depositing a third insulating film 61 at the conductive plug 51 and at the peripheral edges thereof, thereby forming an embedded bit line. Thereafter, impurities in a source/drain region and the doped polysilicon film 41 are diffused through an annealing process, thus establishing mutual connections. |
