| 摘要 |
PROBLEM TO BE SOLVED: To provide a light-emitting semiconductor element, capable of eliminating the inefficiency in current injection and a decrease in quantum efficiency for the semiconductor light-emitting element. SOLUTION: Semiconductor thin layers 11a, 12b are inserted to separate confinement heterostructure layers(SCH layers) 11, 12, the semiconductor thin layer 12a has a positive value with which the valence band discontinuity creates no barrier against holes and the conductive band discontinuity creates barrier against elements, and the semiconductor thin layer 11a is provided with a band construction creating a positive value in which a conductive band discontinuity creates no barrier against electrons but the valence band discontinuity creates a barrier against holes. Also, the valence band discontinuity between SCH layer 12 at p-type clad layer side and a clad layer 14 is constituted with a clad layer 14 which creates no barrier against holes, and the conductive band discontinuity between the SCH layer 11 at an n-type clad layer side and a clad layer 13 is constituted with the clad layer 13 which creates no barrier against electrons. |
