| 发明名称 |
Isolation wall between power device |
| 摘要 |
<p>The isolating wall is a highly doped layer having a concentration above 10<1>6 atoms per 1 cm<3> of carriers. The layer forms a central section in a power semiconductor chip, separating two elementary components in separate compartments. One of the components operates at a high current density.</p> |
| 申请公布号 |
EP0881672(A1) |
申请公布日期 |
1998.12.02 |
| 申请号 |
EP19980410055 |
申请日期 |
1998.05.22 |
| 申请人 |
STMICROELECTRONICS S.A. |
发明人 |
DUCLOS, FRANCK;RAMI, FABIEN |
| 分类号 |
H01L29/73;H01L21/331;H01L21/761;H01L27/08;H01L29/732;H01L29/74;H01L29/747;(IPC1-7):H01L21/761 |
主分类号 |
H01L29/73 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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