发明名称 |
Epitaxial wafer and method of preparing the same |
摘要 |
A high performance epitaxial wafer which is useful, for example in a light emitting device is produced with a buffer layer. The epitaxial wafer has a substrate of a compound semiconductor selected from a group consisting of GaAs, GaP, InAs and InP. The buffer layer of GaN is grown on the substrate to a thickness within the range of 10 nm to 80 nm. An epitaxial layer of GaN is formed on the buffer layer. The buffer layer is grown at a first temperature by organic metal chloride vapor phase epitaxy, while the epitaxial layer is grown at a second temperature, which is higher than the first temperature, by the organic metal chloride vapor phase epitaxy.
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申请公布号 |
US5843590(A) |
申请公布日期 |
1998.12.01 |
申请号 |
US19950574628 |
申请日期 |
1995.12.19 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
MIURA, YOSHIKI;FUJITA, KEIICHIRO;TAKEMOTO, KIKUROU;MATSUSHIMA, MASATO;MATSUBARA, HIDEKI;TAKAGISHI, SHIGENORI;SEKI, HISASHI;KOUKITU, AKINORI |
分类号 |
H01L21/20;H01L33/00;H01L33/02;(IPC1-7):B32B18/00 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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