METHOD OF SIMULATING HOT CARRIER DETERIORATION OF A P-MOS TRANSISTOR

摘要

A method of simulating hot carrier deterioration of a P-MOS transistor uses the following formulas (A1), (A2), (A3) and (A4) or the following formulas (A1), (A5), (A3) and (A4) (A2), and coefficients A, n, B and m are determined by a preliminary measuring experiment, whereby a transistor lifetime r can be estimated: Vth=Vfb+ sigma .Vd (A1) DELTA Vth= DELTA Vfb (A2) ( DELTA Vfb)f=A. sigma n (A3) tau =B.(Ig/W)-m (A4) DELTA Vth= DELTA Vfb+ DELTA sigma .Vd (A5)