| 摘要 |
<p>A method of manufacturing semiconductor devices using an improved chemical mechanical planarization processes for the planarization of the surfaces (24) of the wafer (60) on which the semiconductor devices (22) are formed. The improved chemical mechanical planarization process includes the formation of a flat planar surface from a deformable coating (30) on the surface of the wafer filling in between the surface irregularities prior to the planarization of the surface through chemical mechanical planarization process.</p> |
