| 摘要 |
This invention is to provide a plasma processing method including the discharge beginning step of supplying a second high-frequency power into a processing chamber through an impedance matching circuit and then supplying a first high-frequency power larger than a power in processing into the processing chamber to generate a plasma, the adjustment step of reducing the first high-frequency power to be close to the value in processing, increasing the second high-frequency power to be close to the value in processing, and then adjusting the first high-frequency power to obtain a plasma strength of a predetermined value, and the plasma processing step of causing the impedance matching circuit to perform a matching operation and simultaneously adjusting the first high-frequency power to obtain a plasma strength of a desired value in processing, thereby performing plasma processing of a substrate to be processed. Plasma discharge can be automatically smoothly begun with high reproducibility, and stable plasma discharge can be maintained. Even in case of disappearance of discharge, plasma discharge can be quickly rebegun. <IMAGE> |
