| 摘要 |
A first photoresist layer has opening portions in a region where an n-channel MOS transistor should be formed and in a region where a collector leading region should be formed. Then, phosphorous is implanted with taking the first photoresist layer as a mask. The first photoresist layer is then removed and a second photoresist layer is formed. The second photoresist layer has opening portions in a region where an emitter region should be formed and in the region where the collector leading region should be formed. Phosphorous is implanted with taking the second photoresist layer as a mask to form an n-type selective diffusion region in a region below the region where the emitter region should be formed and in the region where the collector leading region should be formed. Then, the second photoresist layer is removed. A polycrystalline silicon layer is formed over the entire surface and arsenic is implanted therein to make it n-type. Thereafter, heat treatment is performed to form an emitter region in the region where the emitter region should be formed and an n-type diffusion layer in the region where the collector leading region should be formed.
|
