| 发明名称 |
Test structure for dielectric film evaluation |
| 摘要 |
It is an object to obtain evaluation results with a dielectric film evaluating test structure which are close to those with an actual device. Gate electrodes (6A) are provided in a dielectric film evaluating test structure. In the gate electrodes 6A, openings (20) are formed on a gate insulator film (5) by etching, or the like.
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| 申请公布号 |
US5841164(A) |
申请公布日期 |
1998.11.24 |
| 申请号 |
US19960630454 |
申请日期 |
1996.04.10 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TSUJINO, MITSUNORI;KIMURA, MIKIHIRO |
| 分类号 |
G01R27/26;G01N27/22;G01R31/28;H01L21/66;H01L21/822;H01L23/544;H01L27/04;(IPC1-7):H01L29/788;H01L29/76;H01L29/94;H01L31/062 |
主分类号 |
G01R27/26 |
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