| 摘要 |
PROBLEM TO BE SOLVED: To make a bonding wire suitable for multiple semiconductor device in excellent conductivity hardly developing defective deformation in the case of assembling the semiconductor device, by a method wherein the bonding wire contains a specific amount of Co and residual amount containing Au and inevitable impurities. SOLUTION: Co is an element having the deposition intensity to Au enabling to increase the wire strength without deteriorating the conductivity so much by depositing the fine deposit in the Au. Especially, it is recommended to specify the Co concentration to be 0.5-10%, because, if it does not exceed 0.5%, the deposit amount is too little to satisfactorily enhance the effect of increasing the wire intensity, on the contrary, if it exceeds 10%, the alloy workability is deteriorated by making the fine wires hardly processed. Besides, in order to satisfactorily display the wire characteristics, it is recommended to perform the annealing step for Co deposition in addition to the solution annealing step. Through these procedures, the high wire deformation preventiveness can be satisfactorily achieved. |
