| 摘要 |
PROBLEM TO BE SOLVED: To raise the adhesion of a heat radiating plate to a bonding agent and to increase the adhesive strength of the radiating plate to a radiating fin by a method wherein an oxide film is provided on the region, which comes into contact with the bonding agent, of the radiating plate. SOLUTION: A semiconductor device consists of a needlelike crystal copper oxide film 6 formed on the whole surface of a copper material, a heat radiating plate 8 bonded to a die pad 2 for mounting a semiconductor component 1 via a bonding agent 7, the component 1, the pad 2, wires 3, inner leads 4, a sealing resin 9 for sealing one part of the plate 8 and a radiating fin 11 mounting to one part of the plate 8 and one part of the resin 9 via a bonding agent 10. Heat generated in the component 1 is transferred to the plate 8 via the pad 2 and moreover, is transferred to the fin 11 and is dissipated. In this case, the surface of the region, which comes into contact with the agent 10, of the plate 8 is roughened by the formation of the film 6 and the adhesion of the plate 8 to the agent 10 is increased. Accordingly, the adhesive strength of the plate 8 to the fin 11 is increased. |
