发明名称 Ferroelectric material, nonvolatile memory device and their manufacturing methods
摘要 It is intended to provide a ferroelectric that exhibits superior ferroelectricity. A ferroelectric provided is an oxide having a layered crystal structure that is composed of Bi, a first element Me, a second element R, and O. The first element Me is at least one element selected from the group consisting of Na, K, Ca, Ba, Sr, Pb, and Bi. The second element R is at least one element selected from the group consisting of Fe, Ti, Nb, Ta, and W. Ninety-eight percent or more of the entire body of the ferroelectric exhibits ferroelectricity. After an oxide having a layered crystal structure has been grown by a vapor-phase method (crystal growth step), electrodes are attached to the oxide having a layered crystal structure and a voltage is applied thereto (voltage application step). As a result, strains of crystal lattices are corrected at least partially, whereby portions that did not exhibit ferroelectricity at all or did not exhibit superior ferroelectricity due to such large strains that the symmetry of crystal lattices is lost are changed so as to exhibit superior ferroelectricity. <IMAGE>
申请公布号 EP0878847(A1) 申请公布日期 1998.11.18
申请号 EP19980108834 申请日期 1998.05.14
申请人 SONY CORPORATION 发明人 MACHIDA, AKIO;NAGASAWA, NAOMI;AMI, TAKAAKI;SUZUKI, MASAYUKI
分类号 C30B29/22;H01L21/314;H01L21/316;H01L21/8246;H01L27/105;H01L27/115 主分类号 C30B29/22
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