发明名称 |
Interpoly dielectric process |
摘要 |
A process is provided for fabricating a nonvolatile memory cell. According to the process, source and drain regions are formed on a first conductivity-type semiconductor substrate; and insulating layer is formed on the source and drain regions; a floating gate is formed on the insulating layer; a dielectric composite is formed on the floating gate; and a control gate is formed on the dielectric composite. The dielectric composite includes a bottom layer of silicon dioxide formed on the floating gate; a layer of silicon nitride formed on the bottom silicon dioxide layer; and a top layer of silicon dioxide formed on the nitride layer such that the silicon nitride layer of the composite is thinner than the top or the bottom silicon dioxide layer.
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申请公布号 |
US5836772(A) |
申请公布日期 |
1998.11.17 |
申请号 |
US19970829028 |
申请日期 |
1997.03.31 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHANG, YUN;SHONE, FUCHIA;HUANG, CHIN-YI;PENG, NAI CHEN |
分类号 |
H01L21/28;H01L29/51;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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