发明名称 |
Method of forming an integrated circuit device |
摘要 |
A mask is used for lightly doped drain and halo implants in an integrated circuit device. The mask exposes only portions of the substrate adjacent to field effect transistor gate electrodes. Since the halo implant is made only near the transistor channels, where it performs a useful function, adequate device reliability and performance is obtained. Since the halo implant is masked from those portions of the active regions for which it is not necessary, active region junction capacitances are lowered. Such lowered capacitances result in an improved transistor switching speed. The mask used to define the lightly doped drain and halo implant region can be easily formed from a straight forward combination of already existing gate and active area geometries.
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申请公布号 |
US5837587(A) |
申请公布日期 |
1998.11.17 |
申请号 |
US19960726335 |
申请日期 |
1996.10.03 |
申请人 |
SGS-THOMSON MICROELECTRONICS, INC. |
发明人 |
WEI, CHE-CHIA |
分类号 |
H01L21/336;H01L21/8238;H01L27/092;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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