| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor microwave amplifier of simple structure wherein the connection impedance between the ground electrode of a semiconductor amplifying element and a ground surface is low, and isolation between an input and an output and between the surface and the back of a printed board at the time of multilayered printed board mounting is high. SOLUTION: This amplifier has a metal plate (electromagnetic coupling shielding means) 1 which is connected with a ground electrode 7 and isolates an output electrode 5 from an input electrode 3 in the high frequency region, and shields electromagnetic coupling, and two through holes (ground connection means) 9 which connect the ground part of the semiconductor amplifying element 2 with the ground surface 10 of I/O side microstrip lines (4, 6). The metal plate 1 has a part which is inserted in the through holes 9 and acts as the means for preventing solder 11 from flowing into the through holes 9 at the time of reflow. The part is inserted in the through holes 9, turned into the grounded state, and fixed with the solder 11. Before reflow, the solder 11 is spread on the surface of a ground land 8, and fixes the ground electrode 7 and the metal plate 1 simultaneously at the time of reflow. |
