| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with improved reliability at a high temperature, which suppresses corrosion reaction with respect to seal resin at a junction between an alloy thin wire and an aluminum electrode. SOLUTION: A semiconductor device has a structure to seal the junction between the alloy thin wire and the electrode film by resin. The seal resin is epoxy resin containing at least one of boromine and antimon of total 0.1-15 wt.%. The material of the electrode is aluminum or aluminum alloy. The alloy thin wire contains 0.005-0.5 wt.% Mn. Further, the alloy thin wire contains 0.05-1.0 wt.% Pd, and at least one of Pt, Ag and Cu of total 0.01-2.0 wt.%. Further, the alloy thin wire contains at least one of Ca, Be, In and rare earth element of total 0.0005-0.05 wt.%. |
