| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element using a II-VI compound semiconductor which can make the life of the element long and which can enhance the reliability of the element by a method wherein an increase in an operating voltage is suppressed in an electrification operation. SOLUTION: A semiconductor laser has an SCH structure in which a ZnCdSe layer is used as an active layer, in which a ZnSSe layer is used as a light waveguide layer and in which a ZnMgSSe layer is used as a clad layer. In the semiconductor laser, an n-type ZnSSe light absorption layer 5 whose band gap is smaller than the band gap of n-type ZnMgSSe clad layer 4, 6 is inserted between the n-type ZnMgSSe clad layers 4, 6. The n-type ZnSSe light absorption layer 5 is inserted into a position whose distance from the center of the ZnCdSe active layer 6 is 500 nm or lower, preferably 100 to 400 nm, and the thickness of the n-type ZnSSe light absorption layer 5 is set at 300 nm or lower, preferably at 100 to 300 nm or lower, more preferably at 100 to 250 nm or lower. |
