| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to easily form a current injection region and a non-current injection region on the surface of a P-type gallium nitride compound semiconductor on which an electrode metal is formed, by causing the non-current injection region on the surface of the gallium nitride compound semiconductor to have a higher resistance than that of the non-ohmic or current injection region. SOLUTION: An AlGaN buffer layer 2, an n-type GaN layer 3, an n-type AlGaN clad layer 4, an InGaN active layer 5, an Mg doped AlGaN clad layer 6, and an Mg doped GaN contact layer 7 are sequentially grown on a substrate 1. The Mg doped layers are transformed into p-type layers by heat-treatment. Next, the p-type AlGaN clad layer 6 is etched, and the P<+> type GaN contact layer 7 and the p-type AlGaN clad layer 6 are formed into ridge waveguide. A surface 10 on portions of the p-type layers 6 and 7 which are exposed to Cl2 is a high resistance layer. A p-type electrode 8 formed on the surface of the P<+> type GaN contact layer 7 and that of the p-type AlGaN clad layer and the surface 10 are non-ohmic. |
