发明名称 COMPRESSIVELY BONDED SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To absorb dispersion in height of a contact surface and reduce heat resistance and electric resistance in a contact interface by applying a metallic powder sintering layer or a metallic flake sintering layer to at least one surface of compressively bonded surfaces in opposition to each of a main electrode board and an intermediate electrode board. SOLUTION: A first main electrode 2 is formed in a first main surface of a wafer 1, a second main electrode 3 is formed in a second main surface, and intermediate electrode boards 4, 5 consisting of Mo and W are arranged in both the electrode surfaces. A pair of main Cu electrode boards 6, 7 are arranged in an outside part of the intermediate electrode boards 4, 5 and pressurized at once, thus bringing each of members into contact with each other. In the state, metallic powder sintering layers or metallic flake sintering layers 8, 9 are applied to at least one surface of compressively bonded surfaces in opposition to the main electrode boards 6, 7 and the intermediate electrode boards 4, 5. When a pressing force is applied in the state, the metallic powder sintering layers or the metallic flake sintering layers 8, 9 are compressed and deformed, and good contact between both the two surfaces is completed.
申请公布号 JPH10303228(A) 申请公布日期 1998.11.13
申请号 JP19970105722 申请日期 1997.04.23
申请人 HITACHI LTD 发明人 KATO MITSUO;KODAMA HIRONORI;SAWAHATA MAMORU
分类号 B22F7/08;C23C24/08;H01L21/52;H01L29/74;H01L29/78 主分类号 B22F7/08
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